GE Research Awarded $3 MM ARPA-E Project to Develop World’s 1st High-Voltage Silicon Carbide Super Junction Transistor for Next Generation Grid Solutions

GE Newsroom | Feb 21, 2019 at 2:03 PM

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research Awarded $3 MM ARPA-E Project to Develop World’s 1st High-Voltage Silicon Carbide Super Junction Transistor for Next Generation Grid Solutions

GE Newsroom | Feb 21, 2019 at 2:03 PM

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research Awarded $3 MM ARPA-E Project to Develop World’s 1st High-Voltage Silicon Carbide Super Junction Transistor for Next Generation Grid Solutions

GE Newsroom | Feb 21, 2019 at 2:03 PM

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research Awarded $3 MM ARPA-E Project to Develop World’s 1st High-Voltage Silicon Carbide Super Junction Transistor for Next Generation Grid Solutions

GE Newsroom | Feb 21, 2019 at 2:03 PM

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research Awarded $3 MM ARPA-E Project to Develop World’s 1st High-Voltage Silicon Carbide Super Junction Transistor for Next Generation Grid Solutions

GE Newsroom | Feb 21, 2019 at 2:03 PM

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research Awarded $3 MM ARPA-E Project to Develop World’s 1st High-Voltage Silicon Carbide Super Junction Transistor for Next Generation Grid Solutions

GE Newsroom | Feb 21, 2019 at 2:03 PM

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research Awarded $3 MM ARPA-E Project to Develop World’s 1st High-Voltage Silicon Carbide Super Junction Transistor for Next Generation Grid Solutions

GE Newsroom | Feb 21, 2019 at 2:03 PM

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.