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GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

GE Research today announced it has received a $3 MM ARPA-E project award to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

TAIWAN; Feb 21, 2019: GE Power (NYSE: GE) announced today that Taiwan Power Company (TPC), the national utility of Taiwan, has awarded the DaTan 8&9 power project to the GE-Marubeni consortium.

TAIWAN; Feb 21, 2019: GE Power (NYSE: GE) announced today that Taiwan Power Company (TPC), the national utility of Taiwan, has awarded the DaTan 8&9 power project to the GE-Marubeni consortium.